Liquid Cyclohexane CAS 110-82-7 Ua Photoresist Solvent

Khoom Description

Cyclhexane yog dab tsi?

Cyclohexane yog cov xim tsis muaj xim, tsis muaj kuab lom organic hnyav nrog qhov ntom ntom ntom ntom thiab siab solubility. Nws tus lej CAS yog 110-82-7, EINECS tus lej yog 203-806-2, tshuaj formula yog C₆H₁₂, molecular hnyav yog 84.16. Qhov ceev yog 0.77, melting point yog 6.5 degree, boiling point yog 81 degree. Flash point yog -18 degree, yuav luag insoluble hauv dej, vapor siab ntawm 37.7℃yog 168.8 mmHg, vapor density piv rau huab cua yog 2.9.

Cov ntaub ntawv yooj yim

Siv

Cyclohexane muaj cov txiaj ntsig hauv qab no raws li photoresist hnyav:

• Zoo solubility: Nws muaj qhov zoo solubility rau ntau yam khoom xws li resins thiab photosensitizers hauv photoresists, thiab tuaj yeem ua rau cov khoom sib xyaw ua ke sib luag hauv cov tshuaj los tsim cov txheej txheem photoresist ruaj khov thiab zoo ib yam, uas yog qhov tsim nyog rau kev tsim cov yeeb yaj kiab tom qab ntawm lub substrate.
• Tsawg boiling point thiab volatility: Nws boiling point yog hais txog 81 degree, uas yog kuj tsawg. Tom qab photoresist coated, nws tuaj yeem evaporate sai, yog li cov yeeb yaj kiab tiv taus tuaj yeem qhuav sai, ua kom lub sijhawm ua haujlwm thiab txhim kho kev tsim khoom. Ntxiv mus, thaum lub sij hawm photolithography txheej txheem, qhov tseeb ntawm cov tshuaj tiv thaiv photochemical thiab cov qauv hloov pauv yuav tsis cuam tshuam los ntawm cov kuab tshuaj residues.
• Kev ruaj ntseg tshuaj lom neeg siab: Nws muaj tshuaj lom neeg ruaj khov, tsis yooj yim rau cov tshuaj lom neeg nrog cov khoom hauv photoresist, thiab tsis yooj yim rau decompose los yog deteriorate nyob rau hauv cov xwm txheej ntawm lub teeb, kev loj hlob, thiab lwm yam thaum lub sij hawm photolithography txheej txheem. Nws tuaj yeem ua kom muaj kev ruaj ntseg ntawm kev ua haujlwm ntawm photoresist thiab xyuas kom zoo thiab raug ntawm cov qauv photolithography.
• Low surface tension: Cyclohexane has a low surface tension, which allows the photoresist solution to spread better on the substrate surface during coating, forming a uniform and flat resist film, which is beneficial to improve the resolution of photolithography and reduce pattern defects caused by uneven film thickness or uneven surface.
• Tus nqi -effectiveness: Nws yog ib qho uas muaj ntau thiab pheej yig organic hnyav nrog ntau qhov chaw. Thaum huab hwm coj- tsim cov photoresists, siv Cyclohexane ua cov kuab tshuaj tuaj yeem txo cov nqi tsim khoom thiab muaj kev lag luam zoo.

Cov ntaub ntawv kev nyab xeeb

Khaws deb ntawm qhov chaw ntawm qhov hluav taws kub.
Tsis txhob kov qhov muag.
Siv cov kev ceev faj tiv thaiv kom tsis txhob muaj hluav taws xob zoo li qub.
Pov tseg cov khoom no thiab nws lub thawv raws li cov khib nyiab pov tseg.
Tsis txhob tso tawm rau ib puag ncig. Xa mus rau Daim Ntawv Qhia Tshwj Xeeb/Safety Data Sheet.
Yog nqos, tsis txhob ntuav; nrhiav kev kho mob tam sim ntawd thiab qhia lub thawv los yog daim ntawv lo.
Khaws lub thawv rau hauv qhov dej zoo- qhov cua.

Tuam txhab Profile

Gneebioyog ib lub tuam txhab tshwj xeeb hauv kev tshawb fawb, kev tsim kho, kev tsim khoom thiab kev muag khoom ntawm phytochemicals thiab tshuaj zoo.Our Hoobkas tau tsim nyob rau hauv 2016 thiab nyob rau hauv lub xeev Henan, npog thaj tsam ntawm 3,600 square meters. Peb muaj cov kws tshaj lij, zoo - nruab thiab siab - pab pawg R & D zoo nrog ntau tshaj 10 xyoo ntawm R&D kev paub. Pebreagentcov khoom raug xa tawm mus rau ntau lub tebchaws suav nrog Tebchaws Meskas, Russia, Canada, Australia, Europe, thiab lwm yam, thiab peb muab kev pabcuam xa khoom sai rau peb cov neeg siv khoom. Peb cia siab tias yuav tsim kom muaj kev sib koom tes ntev - thiab muaj txiaj ntsig kev koom tes nrog ntau tus phooj ywg yav tom ntej thiab muab cov khoom lag luam zoo tshaj plaws thiab kev pabcuam rau peb cov neeg siv khoom.

Peb cov khoom nrov muaj xws li Organic Chemicals:CAS: 3327-22-8 Nr, CAS 27126-76-7 Phenyliodosohydroxy Tosylate, catalyst:CAS 110-02-1 Thiophene, ntawm lwm tus.

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